| PART |
Description |
Maker |
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| FZT1151A FZT1151ATA FZT1151A-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
PNP Low Sat Transistor
TRANS PNP -40V -3000MA SOT-223 3 A, 40 V, PNP, Si, POWER TRANSISTOR
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 3 A, 40 V, PNP, Si, POWER TRANSISTOR
|
Zetex Semiconductors
Diodes Incorporated
Zetex Semiconductor PLC
|
| 2SA1742 2SA1742K 2SA1742-K |
7 A, 60 V, PNP, Si, POWER TRANSISTOR
Silicon powor transistor
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
NEC[NEC]
|
| 2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTOR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 3A条一（c）|26
|
NEC Corp.
NEC, Corp.
|
| 2SD2164 |
Silicon power transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC
|
| 2SB624 2SB624-T1B 2SB624-L 2SB624-T2B 2SB624BV3 |
BJT 双极型晶体管
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
Silicon transistor
|
NEC, Corp.
NEC[NEC]
Weitron Technology
|
| 2SC3734 2SC3734-L 2SC3734-T1B 2SC3734-T2B |
Silicon transistor
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC[NEC]
|
| 2SA1840 |
Silicon power transistor
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
|
NEC
|
| MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor
Toshiba Corporation
|
| CENU05 CENU06 CENU57 CENU07 CEN-U07 CENU55 CENU56 |
SILICON COMPLEMENTARY POWER TRANSISTORS 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-202
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
http://
|
| 2SA1845 |
Silicon power transistor
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
NEC
|
| ASIS15-28 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
NPN SILICON RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
